We seek to understand the performance of materials in opto-electronic devices by characterizing the materials themselves within the full functioning device through non-destructive and non-invasive optical methods. These measurements are conducted during material fabrication, to probe the full operational device, and under conditions the material may encounter while in use. Students working with our group and collaborators are involved in:
- Materials and Device Fabrication
- Optical and Materials Characterization
- Optical Modeling
- Performance Loss Diagnosis
- Metrology
Materials and Devices
Single Junction and Multijunction Solar Cells
Infrared Sensors
Amorphous and Nanocrystalline Silicon and its Alloys
II-VI Compounds including CdTe, CdS, CdSe, and their Alloys
Hybrid Inorganic-Organic Lead Halide based Perovskites
Transparent Conductors
Metal Oxides
Sculptured Thin Films
Infrared Sensors
Amorphous and Nanocrystalline Silicon and its Alloys
II-VI Compounds including CdTe, CdS, CdSe, and their Alloys
Hybrid Inorganic-Organic Lead Halide based Perovskites
Transparent Conductors
Metal Oxides
Sculptured Thin Films
Optical Characterization
Photothermal Deflection Spectroscopy (Sciencetech)
Dual Beam Photoconductivity (Sciencetech)
Spectroscopic Ellipsometry from :
Mapping Spectroscopic Ellipsometry
Dual Beam Photoconductivity (Sciencetech)
Spectroscopic Ellipsometry from :
- Near Infrared to Ultraviolet 190 to 1700 nm (J. A. Woollam RC2, V-VASE, M2000)
- Infrared 1.7 to 38 microns (J.A. Woollam IR-VASE)
- Ultraviolet to 140 nm (J. A. Woollam VUV-VASE)
- Terahertz 210 microns to 3 mm (J.A. Woollam THz-VASE)
Mapping Spectroscopic Ellipsometry
Material Fabrication
Plasma Enhanced Chemical Vapor Deposition (PECVD)
Physical Vapor Deposition
Glancing Angle Deposition (GLAD)
Multi-Source Co-Evaporation
Physical Vapor Deposition
Glancing Angle Deposition (GLAD)
Multi-Source Co-Evaporation